Based on SiC Gen1p technology, thanks to a 0V turn-off, it enables unipolar gate driving thus simplifying the design with less components on the PCB. With a creepage of 4.8mm, the package can achieve a working voltage exceeding 900V, with no additional coating for isolation. Customers benefit from lower package parasitics, experience lower switching losses and ease of design thanks to a symmetrical lead layout for higher thermal-cycling performance. Diffusion soldering of the chip through “.XT Technology” further improves the thermal dissipation.
CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK addresses design requirements of Automotive Tier1 and OEM for On-board Charger and DC-DC converters for Electric Vehicles, enabling a system solution approach with an easy assembling (same package thickness, same gap filler) together with other TSC Infineon packages.
Related products
| Product name | Status | Infineon Package name | VDS max [V] | RDS(on) @ Tj = 25°C [mΩ] | ID @25°C (max) [A] |
| AIMCQ120R020M1T | active and preferred | PG-HDSOP-22 | 1200 | 19 | 116 |
| AIMCQ120R030M1T | active and preferred | PG-HDSOP-22 | 1200 | 30 | 78 |
| AIMCQ120R040M1T | active and preferred | PG-HDSOP-22 | 1200 | 40 | 61 |
| AIMCQ120R060M1T | active and preferred | PG-HDSOP-22 | 1200 | 60 | 44 |
| AIMCQ120R080M1T | active and preferred | PG-HDSOP-22 | 1200 | 80 | 34 |
| AIMCQ120R120M1T | active and preferred | PG-HDSOP-22 | 1200 | 117 | 24 |
| AIMCQ120R160M1T | active and preferred | PG-HDSOP-22 | 1200 | 160 | 18.6 |
