Infineon’s radiation hardened 1 and 2 Mb non-volatile Ferroelectric RAM (F-RAM) memories offers the utmost reliability and performance for extreme environments.   The F-RAMs are low-power and support a parallel interface configured as 128K x 8 for the 1Mb density and 128K x 16 for the 2Mb density.  Our rad hard parallel F-RAMs are ideal for data storage for sensors and instruments, data logging for satellite calibration data and microcontroller boot code storage.

Our rad hard F-RAM’s virtually infinite endurance, instant non-volatile write technology, greater than 100-year data retention and immune to Single Event Upsets (SEU) is the highest reliable, non-volatile memory for space applications and is a direct replacement for parallel EEPROMs.

Key features

CYRS15B101N / CYRS15B102N

• 1 Mb (128K x 8) and 2 Mb (128K x 16) Mb densities
• 10-trillon read/write cycle endurance
• 120 years data retention at +85°C
• 2.0–3.6 V operating voltage range
• Low operating current (20 mA max)
• –55°C to +125°C military temperature grade
• 44-pin ceramic TSOP
• DLAM QML-V qualified

Radiation performance

• TID: > 150 Krad (Si)
• SEL: > 96 MeV.cm2/mg [LET] @ 115°C
• SEU: lmmune
• SEFI: < 1.34 x 10-4 err/dev.day for active/standby mode
• SEFI: lmmune for sleep mode

Infineon’s radiation tolerant memory enables a right-sized mix of performance and reliability based on size, weight, power, and cost (SWaP-c) considerations. 

Learn more about Infineon’s rad hard memory solutions for extreme environments

• Download the product brief
• See the portfolio