A simpler design path delivering higher power density and higher reliability

MAEIA

Growing digital payload processing demands in next-gen satellites drive greater use of high-power FPGAs and ASICs to handle more on-board processing, in-orbit reconfiguration, artificial intelligence, and more. Providing greater flexibility and higher data throughput means that power topologies for power management and distribution (PMAD) must also adapt to these changing requirements.

Overall system reliability remains a key enabler of more efficient satellite services. System designs using small-footprint, lightweight, and power efficient components, such as the rad hard MOSFETs used in power converter stages and power distribution, can help optimize performance.

With the mix of power FETs in a typical satellite split approximately 60% N-channel and 40% P-channel, IR HiRel’s latest generation R9 superjunction rad hard P-channel FETs address a clear market gap. This especially true in applications, such as load switching, load sequencing, redundancy for power sources, and inrush current limiting, where P-channel FETs offer a simpler design path delivering higher power density and higher reliability than with N-channel devices.

The wider SOA of the newer devices increases the power handling of the P-channel transistor for a given package size. Moreover, the better RDS(ON) performance of these devices may allow some power distribution applications to move away from use of N-channel MOSFETS and take advantage of the simpler gate drive requirements of P-channel MOSFETs.

Available in a variety of hermetic packages, Infineon’s R9 rad hard MOSFET porfolio includes N- and P-channel devices screened to MIL-PRF-19500. QPL-qualified options are available. 

Learn more about R9 rad hard FET technology