Gate drive configurations for GaN power transistors
When driving GaN power transistors, the gate design of the switch needs to be taken into consideration. Infineon is the only company offering both common enhancement-mode (normally-off) types available in the market: the gate injection transistor (GIT) with an ohmic-gate contact, and the Schottky gate transistor (SG). With proper layout, the same PCB design can drive both switch types.
For a deeper understanding of how to drive SG and GIT GaN transistors, and to get the best performance out of your system design, our experts have prepared a white paper for you, which covers:
- The similarities and differences of standard gate drive concepts
- Various driving solutions and their pros and cons
- Design guidelines for RC interface
- Universal gate driving circuit for GIT and SG GaN HEMTs based on RC interface