World’s first industrial GaN transistor with integrated Schottky diode
The CoolGaN™ Transistor G5 with integrated Schottky diode for mass market use is another industry first by Infineon. The small 3 x 5 mm package integrates our GaN transistor with a Schottky diode. With this new integrated solution, reverse conduction losses are lower, and compatibility with a wider range of high-side gate drivers and controllers results in a simpler design.
Features
E-mode normally-off transistor
3 x 5 mm PQFN package
High power capability
Benefits
Reduces total component count
Increase ease-of-use circuit design
Lower BoM cost
Applications
Data center intermediate bus converters and synchronous rectification
Telecom power bricks and synchronous rectification
