BAT15-02ELS - Infineon Technologies

Overview

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02ELS a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Summary of Features

• Low inductance LS = 0.2 nH (typical)

• Low capacitance C = 0.2 pF (typical) at 1 MHz

• TSSLP-2-3 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 footprint

• Pb-free, RoHS compliant and halogen free

Potential Applications

For mixer and detectors in:

• Mobile devices

• Modules and embedded systems