BAT24-02ELS

Overview

This Infineon RF Schottky Diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02ELS a suitable choice for mixer and detector functions in applications with frequencies are as high as 24 GHz.

Summary of Features

  • Low inductanve LS = 0.2 nH (typical)
  • Low capacitance C = 0.2 pF (typical) at voltage VR = 0 V and frequency f = 1 MHz
  • TSSLP-2-3 package (0.62 mm x 0.32 mmx 0.31 mm) with a 0201 footprint
  • Pb-free,  RoHS compliant and halogen free

Potential Applications

For mixer and detectors in:

  • Mobile devices
  • Radar systems and modules
Support