BAR63-04
Overview
This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and low resistance make it suitable for a diversity of switching applications, simplify design-in and support designers in creating versatile end solutions.
Summary of Features
- Low capacitance C = 0.33 pF (typical) at voltage VR = 0 V and frequency f ≥ 1 GHz
- Low forward resistance RF = 2.1 Ω (typical) at forward current IF = 5 mA and frequency f = 100 MHz
- Charge carrier lifetimeτ = 75 ns (typical)
- Industry standard SOT23-3 package (2.9 mm x 2.4 mm x 1 mm)
- Pb-free, RoHS compliant and halogen-free
Potential Applications
Optimized for low bias current RF and high-speed interface switches in:
- Wireless communications
- High speed data networks
Support
