BAR64-02V
Overview
This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its very low capacitance and very low forward resistance make it suitable for a diversity of switching applications, simplify design-in and support designers in creating versatile end-solutions.
Summary of Features
- Very low capacitance C = 0.23 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 GHz
- Very low forward resistance RF = 1.4 Ω (typical) at forward current IF = 5 mA and frequency f = 100 MHz
- Low inductance Ls = 0.6 nH (typical)
- Charge carrier lifetime τ = 75 ns (typical)
- Industry standard SC79 package (1.6 mm x 0.8 mm x 0.55 mm)
- Pb-free, RoHS compliant and halogen-free
Potential Applications
Optimized for low bias current RF and high-speed interface switches in:
- Wireless communications
- High speed data networks
Support
