BFP760
Overview
The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).
Summary of Features
- Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA
- High gain Gms = 16.5 dB at 5.5 GHz, 3 V, 30 mA
- OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA
Potential Applications
- Wireless communications: WLAN, WiMax and UWB
- Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
- Multimedia applications such as portable TV, CATV, FM Radio
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
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