1200 V half bridge gate driver IC EiceDRIVER™ 2ED1322S12M with integrated bootstrap diode and OCP with 500 ns propagation delay
Open online SPICE simulator circuit link: power_1200VDC_high_side_and_low_side_gate_driver_2ED1322S12M.TSC
1200 V high-side/low-side gate driver IC EiceDRIVER™ 2ED1322S12M with integrated
bootstrap diode and OCP
The 2ED132x family contains devices, which control IGBT or SiC MOSFET power devices with a maximum blocking
voltage of +1200 V in half bridge configurations. Based on the used SOI-technology there is an excellent
ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, the design
is very robust against parasitic latch up across the operating temperature and voltage range.
The two independent driver outputs are controlled at the low-side using two different CMOS resp. LSTTL
compatible signals, down up to 3.3V logic. The device includes an under-voltage detection unit with hysteresis
characteristic.
The 2ED132x has symmetric undervoltage lockout levels, which support strongly the integrated ultrafast
bootstrap diode. Additionally, the offline gate clamping function provides an inherent protection of the
transistors for parasitic turn-on by floating gate conditions, when the IC is not supplied via VCC
Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled
The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Undervoltage lockout
- Bootstrap diode
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Gate Driver
Product Info: 2ED1322S12M