EVAL_2EDB_HB_GAN - Infineon Technologies

概要

CoolGaN™ GIT HEMT half-bridge evaluation board with EiceDRIVER™ 2EDB8259Y

EVAL_2EDB_HB_GaN enables the testing of Infineon CoolGaN™ GIT HEMT in combination with EiceDRIVER™ 2EDB8259Y. The board allows to configure the auxiliary supply, that can be bipolar or unipolar, isolated or non-isolated, with bootstrap or without. Using an external inductor, the board can be configured for buck or boost-mode, double-pulse testing or continuous PWM operation, hard or soft-switching at power levels to several kW and frequencies up to MHz range. This board saves the user from having to design their own gate driver and power circuit to evaluate gallium nitride transistors.

For board samples please contact our support.

特長

Simple GaN half-bridge with dedicated GaN driver ICs
Configurable auxiliary supply: unipolar vs. bipolar (with regulation on positive or negative rail), isolated vs non-isolated (bootstrap)
Shunt on low-side GaN for current measurement

利点

Easy setup and use
Enable testing with different configurations (Buck, Boost, Direct and Reverse Double Pulse)
Evaluate high-frequency capabilities of GaN
Evaluate waveforms with low ringing, overshoot, EMI
Enables easy evaluation at multi-kilowatt power levels
Shoot-through check and Eoss measurements via current shunt

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