EVAL_HB_GANIPS_G1 - Infineon Technologies

概要

High-frequency CoolGaN^TM IPS half-bridge 600V evaluation board featuring IGI60F1414A1L

This 600V gallium nitride (GaN) half-bridge IPS chipset evaluation board enables easy and rapid setup as well as a test of CoolGaN™ half-bridge IPS chipset. The generic topology can be configured for boost or buck operation, pulse testing, or continuous full-power operation. Test points provide easy access to connect signals to an oscilloscope to measure the switching performance of CoolGaN™ half-bridge IPS chipset. This board saves the user from designing their own gate driver and power circuit to evaluate gallium nitride transistors.

The half-bridge circuit board features a single PWM input intended for the connection of a 50 Ω pulse generator. Also, digital inputs are provided to drive the high and low-side GaN devices with a microcontroller. The board is powered from a single 5 V supply input, which powers everything, including the isolated gate driver power supplies. Deadtime between the high- and low-side is initially set to 100 ns but is trimpot-adjustable.

An external inductor can be connected using the supplied pluggable connector. The output and bus voltage can range up to 450 V, limited by the capacitor rating. This half-bridge can switch continuous currents of 3 A and peak currents of 10 A, hard or soft-switching. Operating frequency can be up to several MHz, depending on transistor dissipation (limited to about 2.5 W per device / 5 W for the chipset with appropriate heatsink and airflow).

特長

Simple GaN half-bridge chipset with Digital In / Power Out
Single 5 V low voltage supply needed
Isolated Gate drivers power supply provided
High and low side complimentary PWM generator with adjustable dead time provided with single PWM input
Digital logic inputs for high and low side drivers provided
Bootstrap circuitry for high side gate driver supply available
PCB bottom side heatsinking possible for higher power dissipation

利点