CYEL15B102N-ZS60XM | Radiation tolerant, highly reliable, small footprint, 2Mb non-volatile Ferroelectric RAM (F-RAM) for NewSpace

概要

Our radiation tolerant, parallel interface, SPI Ferroelectric RAM (F-RAM) is one of the industry’s lowest power, non-volatile memory solutions that is guaranteed to 50 Krad (Si) TID and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliaibility for NewSpace applications.

特長

2 Mb density
128K x 16, parallel interface
60ns access time
Infineon instant non-volatile write technology
10-trillon read/write cycle endurance
120 years data retention at +85°C
Extremely low programming voltage (2V)
2.0 V–3.6 V operating voltage range
Low operating current (10 mA max)
–55°C to +125°C military temperature grade
44-pin TSOP package

利点

AEC-Q006 compliant
ROHS compliant
50 Krad (Si) TID radiation performance
Single Lot Date Code (SLDC)
100% electrical testing coverage
Certificate of Conformance (CoC)

推奨アプリケーション例

Data logging for calibration data for satellites
Data storage for sensors and instruments
Stand-alone boot code or embedded boot code storage for microcontrollers for cube sat payloads
Secure key storage for data encryption
Replacement for NOR flash and EEPROMs