5962R2321301VXC
概要
Our rad hard F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications.
特長
- 2 Mb density (128K x 16)
- 10-trillon read/write cycle endurance
- 120 years data retention at +85°C
- Extremely low programming voltage (2V)
- Low operating current (20 mA max)
- DLAM QML-V qualified SMD 5962-23213 --> Coming SOON!
- Radiation performance
- TID: > 150 Krad (Si)
- SEL: > 96 MeV.cm2/mg [LET] @ 115°C
- SEU: IMMUNE
- SEFI: 5.35e-5 err/dev.day (standby mode)
- SEFI: IMMUNE (sleep mode)
推奨アプリケーション例
- Data logging for calibration data for satellites
- Data storage for sensors and instruments
- Stand-alone boot code or embedded boot code storage for microcontrollers for cube sat payloads
- Secure key storage for data encryption
- Direct replacement for EEPROMs
![](/export/sites/default/_images/product/lowres-Rad-Hard_2Mb-F-RAM_CG-TSOP-44_vA.tif.png_178487981.png)
サポート