IDW80C65D2

概要

650 V IGBT silicon power diode in TO-247 package

Rapid 2 switching 650 V, 80 A emitter controlled power silicon diodes in common cathode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.

特長

  • 1.35 V temperature-stable forward voltage (VF)
  • Highest softness-factor for ultimate softness and low EMI filtering
  • Lowest Irrm to provide low turn-on losses on the boost switch
  • For applications switching between 18 kHz and 40 kHz
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