1EDI20I12MH

概要

ガルバニック絶縁、アクティブミラークランプ、独立したシンク/ソース出力を備えた耐圧1200VのシングルハイサイドゲートドライバIC

当製品はCT技術を採用した1200VハイサイドゲートドライバーICで、300milのワイドボディDSO-8パッケージにソース電流4.4A、シンク電流4.1Aを備えており、IGBTモジュール等にご使用頂けます。

より高い絶縁定格、大電流、伝搬遅延の短縮が求められる用途につきましては、インフィニオンが新たにリリースしたX3 Compactファミリー、1ED3122MU12H.をご覧ください。また、コストパフォーマンスに優れた150milのDSO-8もご用意しています: 1EDI20I12MF

特長

  • 1200 Vコアレス・トランス絶縁型ドライバIC
  • 2 A レール・ツー・レール出力
  • 沿面距離8mmの300ミルワイドボディパッケージ
  • アクティブミラークランプ
図
ビデオ
Share
Share
トレーニング

  • EiceDRIVER™ 1ED Compact now including X3 Compact family (1ED31xx), with up to 14 A output current, 200 kV/µs CMTI
  • Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS

You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.

For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.

Watch now

With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

  • EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
  • The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

Watch now

サポート