1EDI30I12MH
アクティブミラークランプと短絡クランプを備えた1200Vシングルチャネル・ガルバニック絶縁型ハイサイドゲートドライバIC
当製品はCT技術を採用した1200VハイサイドゲートドライバICで、300milのワイドボディDSO-8パッケージにソース電流5.9A、シンク電流6.2Aを備えており、IGBTモジュール等にご使用頂けます
より高い絶縁定格、大電流、伝搬遅延の短縮が求められる用途につきましては、新しくリリースされたX3 Compactファミリー、1ED3122MU12Hをご確認ください。また、コストパフォーマンスに優れた150milのDSO-8もご用意しています:1EDI30I12MF
特長
- 1200Vコアレストランス絶縁ドライバIC
- 3Aレールツーレール出力1200Vコアレストランス絶縁ドライバIC
- 沿面距離8mmの300㎜ワイドボディパッケージ
- アクティブミラークランプ
- EiceDRIVER™ 1ED Compact now including X3 Compact family (1ED31xx), with up to 14 A output current, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.