IR2301S

概要

600 V high-side and low-side gate driver IC

600 V high and low-side gate driver IC for IGBTs and MOSFETs with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package. Also available in 8 Lead PDIP.

特長

  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage dV/dt immune
  • Gate drive supply range from 5 to 20 V
  • Undervoltage lockout for both channels
  • 3.3 V, 5 V and 15 V input logic compatible
  • Matched propagation delay for both channels
  • Logic and power ground +/- 5 V offset
  • Lower di/dt gate driver for better noise immunity
  • Outputs in phase with inputs
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