IRS2103

概要

600 V half-bridge gate driver IC with shoot through protection

600 V half-bridge gate driver IC for IGBTs and MOSFETs with typical 0.29 A source and 0.6 A sink currents in 8 Lead PDIP package. Also available in 8 lead SOIC.

特長

  • Floating gate driver designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 V to 20 V
  • Undervoltage lockout
  • 3.3 V, 5 V, and 15 V logic input compatible
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • Internal set deadtime
  • High-side output in phase with HIN input
  • Low-side output out of phase with LIN input

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