IRS2109S
概要
600 V half-bridge gate driver IC with shutdown
600 V half-bridge gate driver IC IGBTs and MOSFETs with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package. Also available in 8 Lead PDIP, 14 Lead SOIC, 14 Lead PDIP.
For the new version with our SOI technology we recommend 2ED2109S06F, providing integrated bootstrap diode, better robustness and higher switching frequency
特長
- Floating gate driver designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10 V to 20 V
- Undervoltage lockout for both channels
- 3.3 V, 5 V, and 15 V logic input compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- High-side output in phase with HIN input
- Logic and power ground +/- 5 V offset
- Internal 540 ns deadtime
- Lower di/dt gate driver for better noise immunity
- Shutdown input turns off both channels
推奨アプリケーション例
図
ビデオ
トレーニング
サポート
