IRS2181S
概要
600 V high-side and low-side gate driver IC
EiceDRIVER™ 600 V high and low side gate driver IC with typical 1.9 A source and 2.3 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, 14 Lead PDIP, and 14 Lead MLPQ 4X4.
For the new version with our SOI technology we recommend 2ED2181S06F, providing integrated bootstrap diode, better robustness and higher switching frequency
特長
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10 V to 20 V
- Undervoltage lockout for both channels
- 3.3 V and 5 V input logic compatible
- Matched propagation delay for both channels
- Logic and power ground +/- 5 V offset
- Lower di/dt gate driver for better noise immunity
- Output source/sink current capability 1.4 A/1.8 A
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