IRS2334M
概要
600 V three-phase gate driver IC with shoot through protection
600 V Three Phase Driver IC with typical 0.2 A source and 0.35 A sink currents in MLPQ 5x5 28L package for IGBTs and MOSFETs. Also available in 20 Lead SOICWB
特長
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10 V to 20 V
- Integrated dead time protection
- Shoot-through (cross-conduction) prevention logic
- Undervoltage lockout for both channels
- Independent 3 half-bridge drivers
- 3.3 V logic compatible
- Advanced input filter
- Matched propagation delay for both channels
- Lower di/dt gate driver for better noise immunity
- Outputs in phase with inputs
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