IGB20N60H3

概要

600 V, 20 A IGBT3 in TO263 D2Pak package

High speed 600 V, 20 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

特長

  • Low switching losses for high efficiency
  • Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
  • Short circuit capability 5µs
  • Offering Tj(max) of 175°C
  • Packaged with and without freewheeling diode for increased design freedom

利点

  • Low switching and conduction losses
  • Very good EMI behavior
  • Can be used with a small gate resistor for reduced delay time and voltage overshoot
  • High current density
  • Best-in-class 600 V IGBT efficiency and EMI behavior
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