IGW50N60H3
概要
600 V, 50 A IGBT Discrete in TO-247 package
High speed 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
特長
- Low switching losses for high efficiency
- Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability 5µs
- Offering Tj(max) of 175°C
- Packaged with and without freewheeling diode for increased design freedom
利点
- Low switching and conduction losses
- Very good EMI behavior
- Can be used with a small gate resistor for reduced delay time and voltage overshoot
- High current density
- Best-in-class 600 V IGBT efficiency and EMI behavior
ビデオ
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