IKB30N65ES5

概要

650 V, 30 A IGBT with anti-parallel diode in TO-263 package

Hard-switching 650 V, 30 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package copacked with full rated current Rapid 1 fast and soft anti parallel diode, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

特長

  • Very low VCEsat of 1.35 V at 25 °C, 20 % lower than TRENCHSTOP™ 5 H5
  • ICn=four times nominal current (100 °C Tc)
  • Soft current fall characteristics with no tail current
  • Symmetrical, low voltage overshoot
  • Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
  • Maximum junction temperature Tvj=175 °C
  • Qualified according to JEDEC standards

利点

  • VCE(peak) clamping circuits not required
  • Suitable for use with single turn-on / turn-off gate resistor
  • No need for gate clamping components
  • Gate drivers with Miller clamping not required
  • Reduction in the EMI filtering needed
  • Excellent for paralleling
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