IKB40N65EF5

概要

650 V, 40 A IGBT with anti-parallel diode in TO263 package

Hard-switching 650 V, 40 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package copacked with full rated current Rapid 1 fast and soft anti parallel diode, redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. This family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. 

特長

  • 650 V breakthrough voltage
  • Compared to Infineon’s best-in-class HighSpeed 3 family
  • Factor 2.5 lower Qg
  • Factor 2 reduction in switching losses
  • 200 mV reduction in VCEsat
  • Co-packed with Infineon’s new Rapid Si-diode technology
  • Low COES /EOSS
  • Mild positive temperature coefficient VCEsat
  • Temperature stability of Vf

利点

  • Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
  • 50 V increase in the bus voltage possible without compromising reliability
  • Higher power density design
図
サポート