IKW50N65RH5

概要

650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode

650 V, 50 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in TO-247-3 package.

The ultra-fast 650 V hard-switching TRENCHSTOP™ 5 H5 IGBT benefits very low switching losses at switching speed above 30 kHz.

Combination of ultra-fast TRENCHSTOP™ 5 H5 IGBT with half-rated freewheeling SiC Schottky barrier diodes in CoolSiC™ Hybrid discrete enables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.

特長

  • Ultra-low switching losses due to the combination of TRENCHSTOP™ 5 and CoolSiC™ diode technology
  • Very low on-state losses
  • Benchmark switching efficiency in hard switching topologies
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
  • Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

利点

  • Highest efficiency
  • Increased power density
  • Plug & play replacement of the pure silicon devices
  • Easy upgrade of existing designs for higher efficiency
  • Reduced cooling effort
  • Excellent for paralleling
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