DD800S45KL3_B5 4500 V 800 A ダイオード IGBTモジュール
概要
4500 V IHV, 800 A 130mm Diode IGBT module with Emitter Controlled C3 Diode, predestined to be combined with IGBT products (e.g. FZ1200R45KL3_B5 or FZ800R45KL3_B5) - The best solution for your traction and industry applications.
特長
- High DC Stability
- High Dynamic Robustness
- High surge current capability
- 10.2 kV AC Isolation
- AlSiC Base Plate for increased Thermal Cycling Capability
- Package with CTI > 600
- High Creepage and Clearance Distances
利点
- High power density for compact inverter designs
- Standardized housing
図
サポート
