FF800R17KP4_B2 1700 V 800 A デュアル IGBTモジュール

概要

IHM-A 1700 V, 800 A 130 mm dual IGBT Module with IGBT4, enlarged diode and AlSiC base-plate.

特長

  • Low V(cesat)
  • Enlarged Diode for regenerative operation
  • 4 kV AC 1min Insulation
  • AlSiC Base Plate for increased Thermal Cycling Capability
  • UL recognised
  • High Power and Thermal Cycling Capability

利点

  • High power density for compact inverter designs
  • Standardized housing
図
サポート