FZ1200R33HE4D_B9 3300 V, 1600 A single switch IGBT module

概要

IHV B 3300 V, 1200 A 190 mm single switch IGBT module with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. The experienced solution for transportation and industry applications.

特長

• High DC stability
• High short-circuit capability
• Low switching losses
• Low V_CEsat
• Unbeatable dynamic robustness
• T_{vj op} =150°C
• AlSiC base plate with AlN substrate
• For increased thermal cycling
• Fire & smoke EN45545 R22, R23: HL3
• Package with CTI > 600
• 2x PowerCycling vs state of the art
• Enlarged diode for regenaration

利点

• Unbeatable robustness
• 2xPC =200% lifetime
• 2xPC =110% power same lifetime
• 2xPC = 8K more safety buffer
• Fault current RBSOA up to 3000 A
• Performance like any 1500 A 3.3 kV
• 1:1 mechanical swap to 190x140 IHV

図

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