IPA60R060P7

概要

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R_onxA and the inherently low gate charge (Q_G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

特長

Efficiency

600V P7 enables excellent FOM R_DS(on)xE_oss and R_DS(on)xQ_G

Ease-of-use

ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R_G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available

利点

Efficiency

Excellent FOMs R_DS(on)xQ_G/ R_DS(on)xE_oss enable higher efficiency

Ease-of-use

Ease-of-use in manufacturing environments by stopping ESD failures occurring
Integrated R_G reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications

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