IPT030N12N3 G
概要
OptiMOS™ power MOSFET 120 V in TOLL package
The IPT030N12N3 G is the ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance (RDS(on)). Infineon’s OptiMOS™ power MOSFET 120 V technology meets TO-Leadless package, optimized for high-current applications. The TOLL package is the perfect solution for high power density applications that benefit from 30 percent smaller footprint compared to D2PAK 7-pin and lower package inductances.
特長
- Low RDS(on) in compact package, 16% lower than the equivalent D2PAK 7-pin part
- 60% smaller package than D2PAK 7-pin
- Ideal for 72 V battery powered equipment, where 150 V MOSFETs are not needed
利点
- High power density and improved thermal management
- Less board space needed
- High system efficiency and less paralleling required
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