IQE008N03LM5CGSC

概要

OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down Center-Gate DSC package

The IQE008N03LM5CGSC is part of the Source-Down family with RDS(on) of 0.85 mOhm. The Source-Down technology introduces a flipped silicon die, which is positioned upside down inside the components.

It offers increased thermal capability, improved power density and layout possibilities. The dual-side cooling package dissipates three times more power than the overmolded package, and is available in Standard and Center-Gate footprints.

特長

  • Major reduction in RDS(on) by up to 30%
  • Improved RthJC compared to PQFN packages
  • Standard & Center-gate footprints
  • New, optimized layout possibilities

利点

  • High power density and performance
  • Superior thermal performance
  • Efficient layout for space use
  • Simplified MOSFET parallelization
  • Improved PCB losses
  • Reduced parasitics

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