ISC151N20NM6
OptiMOS™ 6 power MOSFET 200 V normal level in SuperSO8 package
ISC151N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability.
The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS™ 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.
The improved switching behavior makes the OptiMOS™ 6 200 V family an ideal choice for any type of switching applications such as telecom, server, solar, or audio. Additionally, the combination of wide SOA and industry-leading RDS(on) result in a perfect fit for static switching applications such as BMS.
特長
Compared to previous 200 V technology:
- 42 % lower RDS(on)
- 89% lower Qrr(typ)
- More than 3 times softer diode
- Improved capacitance linearity
- Improved SOA
Pb-free plating and RoHS compliant
利点
- Low conduction losses
- Low switching losses
- Stable operation with improved EMI
- Less paralleling required
- Better current sharing when paralleling
- Environmentally friendly
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