IMBG65R057M1H

概要

SiC MOSFET in compact SMD package

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMBG65R057M1H CoolSiC™ MOSFET 650V is a compact SMD 7 pin SiC MOSFET built on a state-of-the-art Infineon SiC trench technology and used in high power applications. It is optimized to enable max system performance, compactness and reliability.

特長

Low Q_rr and Q_oss
Low switching losses
Commutation robust fast body diode
Leading trench technology with superior gate oxide reliability
.XT interconnection technology for best-in-class thermal performance
Increased avalanche capability
SMD package for direct integration into PCB
Sense pin for optimized switching performance

利点

High performance, high reliability and ease of use
Enable high system efficiency and power density
Reduces system cost and complexity
Enable cheaper, simpler and smaller systems
Works in topologies with continuous hard commutation
Fit for high temperature and harsh operations
Enables bi-directional topologies

推奨アプリケーション例

Infineon package pictures D2PAK 7pin TO-263-7

トレーニング

Bi-directional converters using WBG

PSS eLearning 1935 Bi-directional converters using WBG

Understand why to use WBG switches for bi-directional converters, the topologies used and how they function.

Click here to see more

品質

サポート