IMT65R048M1H CoolSiC™ MOSFET discrete 650 V in TOLL package

概要

Small footprint, low inductance and reduced thermal impedance for high density designs

CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for numerous systems. The reduction of thermal impedance compared to D²PAK, together with the innovative .XT interconnect, make the 48 mΩ product suitable for high power designs and mid power systems, with high efficiency targets. It ideally fits the emerging Totem Pole PFC topology in high to mid power systems. It also enables high efficiency and density in DC-DC and AC-DC stages of high to mid power systems.

特長

  • Small form factor
  • Low parasitic inductance and Kelvin source connection
  • Reduced thermal impedance
  • .XT interconnect
  • Thermal improvement over D²PAK and similar to TO-220
  • Suitable for wave or reflow soldering
  • Industry standard package - JEDEC industrial applications qualified (J-STD20 and JESD22)

利点

  • Enable high system power density and high switching operations
  • Enable cheaper and faster SMD assembly
  • Ease of use and compatibility with existing vendors
  • Reduced switching losses
  • Lower case temperature and higher reliability
  • Enables easy design-in with complementing Infineon products like CoolMOS™ and CoolGaN™

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