IMW65R057M1H

概要

CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R057M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.

特長

  • Low capacitances
  • Optimized switching behavior at higher currents
  • Commutation robust fast body diode with low reverse recovery charge (Qrr)
  • Superior gate oxide reliability
  • Excellent thermal behavior
  • Increased avalanche capability
  • Works with standard drivers

利点

  • High performance, high reliability and ease of use
  • Allows high system efficiency
  • Reduces system cost and complexity
  • Enables smaller system size
  • Works in topologies with continuous hard commutation
  • Fit for high temperature and harsh operations
  • Enables bi-directional topologies

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