BGA7H1N6

概要

Silicon Germanium Low Noise Amplifier for LTE

特長

  • Insertion power gain: 12.5 dB
  • Low noise figure: 0.60 dB
  • Low current consumption: 4.7 mA
  • Operating frequencies: 2300 - 2690 MHz
  • Supply voltage: 1.5 V to 3.3 V
  • Digital on/off switch (1V logic high level)
  • Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
  • B7HF Silicon Germanium technology
  • RF output internally matched to 50 Ω
  • Only 1 external SMD component necessary
  • 2kV HBM ESD protection (including AI-pin)
  • Pb-free (RoHS compliant) package
サポート