BGA7M1N6
概要
Silicon Germanium Low Noise Amplifier for LTE
特長
Insertion power gain: 13.0 dB
Low noise figure: 0.60 dB
Low current consumption: 4.4 mA
Operating frequencies: 1805 - 2200 MHz
Supply voltage: 1.5 V to 3.3 V
Digital on/off switch (1V logic high level)
Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
B7HF Silicon Germanium technology
RF output internally matched to 50 Ω
Only 1 external SMD component necessary
2kV HBM ESD protection (including AI-pin)
Pb-free (RoHS compliant) package
サポート