BAR81W

概要

This Infineon cost optimized RF PIN diode is designed for high performance switches. Its shunt configuration results in reduces parasitic inductance and is mostly suited for high-speed switching applications.

特長

  • Optimized for short - open transformation using λ/4 transmission lines
  • Reduced impact of parasitic inductance due to design
  • High shunt signal isolation ISO = 27 dB (typical) at forward current IF = 1 mA and frequency f = 1 GHz
  • Low shunt insertion loss IL = 0.17 dB (typical) at voltage VR = 0 V and frequency f = 1 GHz
  • Charge carrier lifetime τ = 80 ns (typical)
  • Industry standard SOT343 package (2.0 mm xm 2.1 mm x 0.9 mm)
  • Pb-free, RoHS compliant and halogen-free

推奨アプリケーション例

Optimized for low bias current RF and high-speed interface switches in:

  • Wireless Communications
  • High Speed Data Networks
サポート