BFP650F

概要

NPN Silicon Germanium RF Transistor

特長

  • For medium power amplifiers and driver stages
  • High OIP3 and P-1dB
  • Ideal for low phase noise oscilators
  • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz
  • Noise figure F = 0.8 dB at 1.8 GHz
  • 70 GHz fT- Silicon Germanium technology
  • Pb-free (RoHS compliant) package

推奨アプリケーション例

  • Driver amplifier
  • ISM bands 434 and 868 MHz
  • 1.9 GHz cordless phones
  • CATV LNA
  • Transmitter driver amplifier
  • 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
  • Output stage LNA for active antennas
  • TV, GPS, SDARS
  • 2.4 / 5 GHz WLAN
  • 2.4 / 3.5 / 5 GHz WiMAX, etc.
  • Suitable for 5 - 10.5 GHz oscillators
サポート