BFS483

概要

NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA

特長

  • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
  • fT = 8 GHz, F = 0.9 dB at 900 MHz
  • Two (galvanic) internal isolated Transistor in one package
  • For orientation in reel see package information in datasheet
  • Pb-free (RoHS compliant) package

推奨アプリケーション例

  • Wireless Communications
  • For amplifier and oscillator applications in RF Front-end
サポート