专为强化谐振拓扑运作性能打造，英飞凌推出全新 650 V CoolMOS™ CFD7

2020-10-1 | 市场新闻

【2020年10月9日，德国慕尼黑讯】在工业应用 SMPS 的设计上，最新的技术趋势会将高效率、高功率密度及总线电压上升的需求作整体考虑，也因此触发了对 650V击穿电压 功率器件的需求。英飞凌科技股份有限公司 (FSE：IFX/OTCQX：IFNNY) 旗下 650 V CoolMOS™ CFD7 产品系列即可满足上述需求。此器件适用于软切换应用的谐振拓扑，例如通信电源、服务器、太阳能和非车载的电动车充电。

新款 650 V器件扩展了声誉卓越的 CoolMOS CFD7 系列的电压范围，且为 CoolMOS CFD2 的后继产品。新款 650 V 产品可搭配 LLC 和零电压切换相移全桥拓扑，较前几代产品能提供多项优势。本产品系列击穿电压 提升 50 V，搭配整合高速本体二极管技术及更出色的切换效能，非常适合用于当代设计。极低的反向恢复电荷加上优异的热性能 ，也添加了更多优势。

开关损耗与 RDS(on) 过热相依性皆大幅降低，此产品系列具备非常优异的硬式整流耐用度。由于闸极电荷 (Qg) 改善，加上快速的开关性能，650 V CoolMOS CFD7 系列可提高整个负载范围的效率。在主要的SMPS应用中，相较于竞争产品，这些 MOSFET提供绝佳的轻载效率，满载效率也有所提升。此外，同级最低 RDS(on) 也能让客户能以极具竞争力的价格，提升 SMPS 的功率密度。

供货情况
TO-220、TO-247 及 TO-247 4 引脚封装的 650 V CoolMOS CFD7 现已接受订购。详细信息请浏览 www.infineon.com/650V-CFD7。

Information Number

INFPSS202010-001

Press Photos

  • Thanks to the improved gate charge (Qg) and the fast switching performance, the 650 V CoolMOS™ CFD7 family increases efficiency over the whole load range. In the primarily targeted SMPS application, these MOSFETs provide outstanding light-load and improved full-load efficiency. Furthermore, the best-in-class RDS(on) enables customers to increase the power density level of SMPS at a competitive price.
    Thanks to the improved gate charge (Qg) and the fast switching performance, the 650 V CoolMOS™ CFD7 family increases efficiency over the whole load range. In the primarily targeted SMPS application, these MOSFETs provide outstanding light-load and improved full-load efficiency. Furthermore, the best-in-class RDS(on) enables customers to increase the power density level of SMPS at a competitive price.
    650V_CoolMOS_CFD7_TO220-3-1

    JPG | 375 kb | 1616 x 2126 px

  • Thanks to the improved gate charge (Qg) and the fast switching performance, the 650 V CoolMOS™ CFD7 family increases efficiency over the whole load range. In the primarily targeted SMPS application, these MOSFETs provide outstanding light-load and improved full-load efficiency. Furthermore, the best-in-class RDS(on) enables customers to increase the power density level of SMPS at a competitive price.
    Thanks to the improved gate charge (Qg) and the fast switching performance, the 650 V CoolMOS™ CFD7 family increases efficiency over the whole load range. In the primarily targeted SMPS application, these MOSFETs provide outstanding light-load and improved full-load efficiency. Furthermore, the best-in-class RDS(on) enables customers to increase the power density level of SMPS at a competitive price.
    650V_CoolMOS_CFD7_TO247-3

    JPG | 258 kb | 1113 x 1476 px

  • Thanks to the improved gate charge (Qg) and the fast switching performance, the 650 V CoolMOS™ CFD7 family increases efficiency over the whole load range. In the primarily targeted SMPS application, these MOSFETs provide outstanding light-load and improved full-load efficiency. Furthermore, the best-in-class RDS(on) enables customers to increase the power density level of SMPS at a competitive price.
    Thanks to the improved gate charge (Qg) and the fast switching performance, the 650 V CoolMOS™ CFD7 family increases efficiency over the whole load range. In the primarily targeted SMPS application, these MOSFETs provide outstanding light-load and improved full-load efficiency. Furthermore, the best-in-class RDS(on) enables customers to increase the power density level of SMPS at a competitive price.
    650V_CoolMOS_CFD7_TO247-4-3

    JPG | 264 kb | 1137 x 1476 px