T830N16TOF
Überblick
The T830N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 58mm and a height of 14mm.
Zusammenfassung der Merkmale
- Full blocking capability 50/60 Hz over a wide temperature range
- High DC blocking stability
- High surge current capability
- High turn-on di/dt capability
- High dv/dt capability
Vorteile
- Minimized maintenance and reduced downtime due to high reliability
- Easy System power scaling by special designs for series- and parallel connection
- Fuseless design possible due to high overload capability
Applikationen
This discs can be combined with our GATELEAD MEDIUM POWER
Diagramme
Parameter
Parametrics | T830N16TOF |
---|---|
Clamping force [kn] min max | 9 18 |
Configuration | Electrical Triggered Phase Control Thyristor |
Housing | Disc dia 58mm height 14mm / Ceramic |
ITAVM | 826 (180 ° el sin) |
ITAVM/TC [A/°C] (@180° el sin) | 844/85 |
ITSM | 12500 A |
ITSM [A] (@10ms, Tvj max) | 12500 |
RthJC [K/kW] (@180° el sin) max | 30 |
Tvj [°C] max | 125 |
VDRM / VRRM [V] | 1600 |
VDRM/ VRRM (V) | 1600 V |
VT0 [V] (@Tvj max) max | 0.85 |
VT/IT [V/kA] (@Tvj max) | 1.94/3.0 |
rT [mΩ] (@Tvj max) max | 0.3 |
tq [µs] | 250 |
∫I2dt [A²s · 103] (@10ms, Tvj max) | 781 |
Parametrics | T830N16TOF |
---|
Dokumente
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-
Triggering Electric Triggered Thyristors (ETTs)
EN
06_00 | 2019-09-18 | pdf | 2.6 MB
-
Assembly instructions - Clamp types for Bipolar Power semiconductors
EN
01_00 | 2013-07-22 | pdf | 480 KB
-
Technische Information Bipolare Halbleiter
DE
EN
JA
2012-06-04 | pdf | 2.2 MB
-
Overview High Power Thyristors & Diodes
EN
01_00 | 2020-06-24 | pdf | 247 KB
-
Innovative high power solutions
EN
01_00 | 2024-06-05 | pdf | 638 KB
-
Advantages in Application-Design by using Direct-Light-Triggered Thyristors
EN
2014-02-11 | pdf | 316 KB
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Direct Light-Triggered Solid-State Switches For Pulsed Power Applications
EN
2014-02-11 | pdf | 279 KB
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High-voltage Thyristors for HVDC and Other Applications: Light-triggering Combined with Self-protection Functions
EN
2014-02-11 | pdf | 117 KB
-
Naming System Type designation thyristor and diode discs
EN
01_00 | 2018-05-29 | pdf | 17 KB
Bestellung
Produktname | T830N16TOF |
---|---|
OPN Info | T830N16TOFXPSA1 |
Produktstatus | active and preferred |
Gehäusename | BG-T5814K0-1 |
Standard Package name | |
Onlinebestellung | |
Bleifrei | yes |
Halogenfrei | yes |
RoHS konform | yes |
Verpackungsgröße | 9 |
Verpackungstyp | TRAY |
Moisture Level | NA |
Moisture Packing | NON DRY |
Produktname | T830N16TOF |
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