IRS2308S
Überblick
600 V half-bridge gate driver IC with shoot through protection
EiceDRIVER™ 600 V half-bridge gate driver IC for with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP.
Zusammenfassung der Merkmale
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10 V to 20 V
- Undervoltage lockout for both channels
- Cross-conduction prevention logic
- 3.3 V, 5 V and 15 V input logic compatible
- Matched propagation delay for both channels
- Outputs in phase with inputs
- Lower di/dt gate driver for better noise immunity
- Internal 500 ns deadtime
- Logic and power ground +/- 5 V offset
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