DF80R07W1H5FP_B11 650 V, 80 A booster IGBT module

Überblick

EasyPACK™ 650 V, 100 A booster IGBT module with TRENCHSTOP™ 5 H5, CoolSiC™ Schottky diode, PressFIT contact technology and pre-applied Thermal Interface Material.

Zusammenfassung der Merkmale

Increased blocking voltage capability up to 650 V
Low switching losses
Low inductive design
Al ₂O₃ Substrate with low thermal resistance
Integrated NTC temperature sensor

Vorteile

Compact module concept
Optimized customer’s development cycle time and cost
Configuration flexibility

Diagramme

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