IHW15N120E1
概要
アンチパラレル・ダイオード内蔵1200V,15A IGBT
The Reverse Conducting E1 1200 V, 15 A RC-E IGBTs with monolithically integrated diode in a TO-247 package focusing on system efficiency and reliability for the demanding requirements of induction cooking. Low switching and conducting losses, similar to our RC-H3 family. The RC-E technology uses an IGBT with monolithically integrated reverse conduction diode to set the new benchmark for price/performance and ease-of-use in the industry. This new family offers Infineon’s proven quality in Reverse Conducting IGBTs and meets all the needs of soft switching applications, including attractive pricing compared to other general purpose IGBTs.
特長
- 低いEoffとVCE(sat)
- スイッチングアプリケーション向けの設計
- スイッチング周波数18kHz–40kHz向けに最適化された性能
- 最もよく使われるブロッキング電圧:1200V
利点
- コスト効率が良い設計で価格に対し高性能
- 低損失性により省エネ基準を充足
- 既存デザインに容易に適用可能
- ソフトスイッチングで良好なEMI特性
図
サポート