CoolSiC™ Schottky diode 2000 V enables higher efficiency and design simplification in DC link systems up to 1500 VDC

Oct 23, 2024 | Market News

Munich, Germany – 23 October 2024 – Many industrial applications today are transitioning to higher power levels with minimized power losses, which can be achieved through increased DC link voltage. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) addresses this challenge by introducing the CoolSiC™ Schottky diode 2000 V G5, the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V. The product family is suitable for applications with DC link voltages up to 1500 VDC and offers current ratings from 10 to 80 A. This makes it ideal for higher DC link voltage applications such as in solar and EV charging applications.

The product family comes in a TO-247PLUS-4-HCC package, with 14 mm creepage and 5.4 mm clearance distance. This, together with a current rating of up to 80 A, enables a significantly higher power density. It allows developers to achieve higher power levels in their applications with only half the component count of 1200 V solutions. This simplifies the overall design and enables a smooth transition from multi-level topologies to 2-level topologies.

In addition, the CoolSiC Schottky diode 2000V G5 utilizes the .XT interconnection technology that leads to significantly lower thermal resistance and impedance, enabling better heat management.   Furthermore, the robustness against humidity has been demonstrated in HV-H3TRB reliability tests. The diodes exhibit neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance.

The 2000 V diode family is a perfect match for the CoolSiC MOSFETs 2000 V in the TO-247Plus-4 HCC package that Infineon introduced in spring 2024. The CoolSiC diodes 2000 V portfolio will be extended by offering them in the TO-247-2 package, which will be available in December 2024. A matching gate driver portfolio is also available for the CoolSiC MOSFETs 2000 V.

Availability

The CoolSiC Schottky Diode 2000 V G5 family in TO-247PLUS-4 HCC is available now. An evaluation board for product family is also available. Further information can be found at www.infineon.com/CoolSiC-diode-2kV.

About Infineon

Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The company has around 58,600 employees worldwide and generated revenue of about €16.3 billion in the 2023 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).

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Information Number

INFGIP202410-012

Press Photos

  • Infineon’s CoolSiC™ Schottky diode 2000 V G5 is the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V.
    Infineon’s CoolSiC™ Schottky diode 2000 V G5 is the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V.
    2kV-CoolSiC_Gen5-diode_TO247-4

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