Power
Technology for optimizing power generation, transmission, and consumption
Power subcategories
Collapse all subcategories Expand all subcategories- MOSFET (Si/SiC)
- IGBT
- GaN transistors
- Smart power switches
- Linear Voltage Regulator (LDO)
- DC-DC Converters
- LED Driver ICs
- Diode & Thyristor (Si/SiC)
- Gate Driver ICs
With the introduction of gallium nitride, Infineon is currently the only company in the market offering a full-spectrum portfolio of all power technologies – silicon (Si), silicon carbide (SiC) and GaN. We deliver solutions from microamps to megawatts with superior energy efficiency, offering highly reliable IGBTs, power MOSFETs, GaN e-mode HEMTs, power discretes, protected switches, Si drivers, GaN drivers, IGBT modules, intelligent power modules (IPMs), linear regulators, motor control solutions, LED drivers, and all forms of AC-DC, DC-DC, and digital power conversion.
Please contact Infineon technical support when you need a superior solution for your power management applications.
Infineon‘s MOSFET portfolio offers Automotive MOSFETs, Power MOSFETs and RF MOSFETs. OptiMOS™ for Automotive applications combines leading MOSFET technology with a robust packages to deliver best-in-class performance and outstanding current capacity. In power applications, OptiMOS™ 20V-250V consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit. The revolutionary CoolMOS™ power families 500V-900V set new standards in the field of Energy Efficiency and offer a significant reduction of conduction and switching losses, enabling high power density and efficiency for superior power conversion systems
Infineon offers a comprehensive portfolio of technology leading IGBT Bare Dies, Discretes, Modules and even complete Stacks. This enables us to offer reliable and high efficient solutions for your industrial applications like e.g. General Purpose Inverters, Solar and Wind Inverter, UPS, Welding, Induction Heating and SMPS systems. We also recommend to use our IGBTs in consumer applications like Rice Cookers, Microwave and induction cooking ovens or even airconditioning systems. Discrete Automotive IGBTs and also Modules can be used in applications such as Piezo Injection, HID Lighting, Pumps and Small Drives.
SiC devices offer a number of attractive charcteristics for high voltage power semiconductors when compared to commonly used Silicon (Si). Infineon‘s CoolSiC™ Schottky diodes ranging from 600V-1200V improve efficiency and solution costs for applications such as Server, Telecom Solar, Lighting, Consumer, PC Power and AC/DC. The revolutionary CoolSiC™ 1200V SiC JFET family, in combination with the proposed Direct Drive Technology, represents Infineon’s leading edge solution to bring actual designs towards new and so far unattainable efficiency levels. Also available: High efficient IGBT power modules with SiC freewheeling diodes.
Gallium nitride (GaN) is a wide band gap (WBG) material and permits devices to operate at much higher frequencies and temperatures than conventional semiconductor materials like silicon. Infineon’s CoolGaN™ gallium nitride solution is based on the most robust and performing concept in the market – the enhancement-mode (e-mode) concept, offering fast turn-on and turn-off speed. CoolGaN™ HEMTs offer the highest quality and reliability well beyond the standards and enable performance improvement in several applications such as server, telecom, wireless charging, adapter and charger, and audio. Click here to learn more
Robust and high efficient Thyristors & Diodes in presspack or module housings for high power applications like electrical drives, voltage soft starters, general purpose power supplies and even complex energy transmission systems.
Low and high voltage gate driver IC and board solutions for reliable and efficient controls for IGBTs and MOSFETs. Infineon‘ s DC-DC low voltage gate driver are high speed drivers for dual Power MOSFETs in applications such as Computing and Telecom Point of Load, tailoring the efficiency of the system based on the designer‘s conditions and needs. Please also find our high perfomance Isolated Gate Driver ICs & boards (EiceDRIVER™) for either CoolMOS™ MOSFETs and IGBT Discretes or even Modules for most industrial applications.
The product offering provides power stage solutions with highest efficiency and power density such as DrMOS and DrBlade. With DrBlade Infineon offers a new ultra-compact integrated MOSFET halfbridge driver, based on the revolutionary Blade chip embedding technology.
Login to myInfineon to see all documents available
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Power and sensing - Selection guide 2024-2025
EN
04_00 | 2024-07-08 | pdf | 87.8 MB
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TLE9210x Multi-MOSFET Driver Product Brief
EN
01_01 | 2021-08-06 | pdf | 230 KB
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OptiMOS™ 6 power MOSFETs 120 V
EN
05_00 | 2024-08-27 | pptx | 3.9 MB
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Lighting ICs CDM10V/CDM10VD coolest dimming solution
EN
01_00 | 2024-05-08 | pptx | 5.7 MB
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Lighting ICs linear LED driver ICs portfolio
EN
01_00 | 2024-05-08 | pptx | 4.7 MB
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Lighting ICs XDP™ digital power XDPL8210
EN
01_00 | 2024-05-08 | pptx | 2.5 MB
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Lighting ICs XDP™ digital power XDPL8219
EN
01_00 | 2024-05-08 | pptx | 2 MB
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NFC-PWM configuration ICs NLM0011 and NLM0010
EN
02_00 | 2024-05-08 | pptx | 1.6 MB
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AC-DC LED Driver ICs ICL88xx
EN
01_00 | 2024-05-07 | pptx | 7.6 MB
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Lighting ICs ICL5102HV and ICL5102
EN
02_00 | 2024-05-07 | pptx | 3.1 MB
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Lighting ICs XDP™ digital power XDPL8221
EN
01_00 | 2024-05-07 | pptx | 2.8 MB
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XDPP11xx digital power introduction
EN
01_00 | 2024-05-07 | pptx | 8.8 MB
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Customer presentation XDP7X0-002
EN
01_00 | 2024-03-07 | pptx | 8.4 MB
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Gate drive for power MOSFETs in switching applications
EN
01_00 | 2022-04-20 | pdf | 1.6 MB
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Designing with power MOSFETs - How to avoid common issues and failure modes
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CN
JA
01_02 | 2022-03-22 | pdf | 737 KB
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Power MOSFET - Paralleling power MOSFET in high current applications
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CN
JA
02_01 | 2022-03-22 | pdf | 1.3 MB
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Paralleling MOSFETs in high-current LV drive applications
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CN
JA
01_00 | 2018-04-23 | pdf | 1.8 MB
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Power MOSFET Basics
EN
JA
01_02 | 2007-01-23 | pdf | 776 KB
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Optimized semiconductors help in making robots collaborative
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01_00 | 2018-06-20 | pdf | 329 KB
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Gate Driver Application Selection Matrix
EN
04_20 | 2024-05-30 | pptx | 10.6 MB
Top 6 FAQs. Use the search bar above to show more!
Where to find Simulation parameters & SPICE models?
Please visit our Simulation Model Finder on the internet at
https://www.infineon.com/simulation
Please select "Simulation Models (SPICE, S-parameters, SABER)"
If you cannot find your requested model there, please submit your request via the "click to request model" button on the right handed side.
Infineon uses only Spice and Saber models. These are a generally accepted standard that meets all simulation model requirements.
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What are the benefits of Gate Drive Control ICs?
The HVIC gate drive solution typically cuts down on component counts and PCB size by 50 percent compared to discrete solutions. These devices offer an improved immunity to voltage spikes and contribute to lower switching losses for the IGBTs and FETs. Fast switching times, under-voltage lockout protection, included deadtime are other advantages of these drivers.
Gate drive design compatibility of 600V and 1200V ICs reduces strongly the design time as the same basic circuit design and layout are re-used by just substituting the equivalent ICs.
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Can BTS5180 be used at 24V for an LED driver application?
BTS5180 has a nominal input voltage up to 28V. If the voltage will go higher, then move to BTT6100-2EKA or BTT6200-1EJA/ BTT6200-4EKA.
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What is the difference between TLE7181EM and TLE7182EM?
The main difference between the two devices is in the input types:
a) TLE7181EM uses the PWM/DIR interface and DRVDIS to disable all 4 MOSFETs: only two pins are needed and shoot-through event cannot happen by design.
PWM/DIR interface normal operation
b) on the other hand, TLE7182EM provides 4 independent control inputs to control the MOSFETs individually: the high-side MOSFET inputs are inverted to eventually simplify the connection wiring. Shoot-through events can be avoided if the short-circuit protection is activated by generating a minimum dead time by SCDL pin. TLE7182 offers the possibility to drive 4 low-side MOSFETs as well.
Truth table
If you have any further questions, please submit your request via the Infineon myCases portal. This is a direct channel to get fast and easy support for your needs.
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The best way to reach out to our Applications Engineers is through our Infineon Developer Community
Our Applications Engineers moderate the community to ensure all questions are answered quickly and accurately, either by others in the community or by our own engineers.
If you have any further questions, please submit your request via the Infineon myCases portal. This is a direct channel to get fast and easy support for your needs.
To register, Click on "Register for myInfineon” available at the top right corner of the Infineon homepage and follow the instructions.
To take advantage of additional benefits we recommend to register your corporate email address.
To log-in, click on “Login to myInfineon”.
By clicking on the My Cases link, you will be guided to the My Cases Customer Portal.
You can visit the link directly through: https://mycases.infineon.com.
If any questions, please contact our hotline, https://www.infineon.com/call.
Read more
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Infineon’s global network of partners offer products and services that complement our semiconductor device solutions to accelerate your development efforts and time to market. You can find them here: https://www.infineon.com/partnerfinder.
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